Dr Chiranjib Mitra joined the London Centre for Nanotechnology (LCN) as a Research Fellow in November 2003. He obtained a PhD in physics from the Tata Institute of Fundamental Research (TIFR) in ay in 2001. He then moved to Germany, holding a joint post-doc position at the Max Planck Institute for the Chemical Physics of Solids and at the Institute for Solid State and Materials Research in Dresden where he carried out research in Magnetic Tunnel Junction Devices. He moved from Dresden to the University of Cambridge, where he continued working on Magnetic Tunnel Junction at the Device Materials Group. During this time he became familiar with lithographic techniques and was introduced to the world of Nanotechnology.

In his last year in TIFR he became interested in the rapidly emerging area of Quantum Computers, having taken a course in the Dept of Theoretical Computer Science at TIFR, and looked for an opportunity to transfer to working within this field. An opportunity arose at the London Centre for Nanotechnology, affiliated to University College London. Dr Mitra took up the position of Research Fellow there in November 2003 working in Strongly Correlated Electron Systems within the field of Experimental Condensed Matter Physics. He was also elected a Chevening Technology Enterprise Scholarship fellow in September, 2004.

His current research interests are:

  • Build and characterise solid-state quantum gates for quantum computing.
  • Metal-insulator phase transitions in highly correlated electron systems.
  • Quantum Magnetism.
  • Development of setup for measuring Photo-induced magnetism.

Selected Recent Publications

  • Growth of epitaxial and polycrystalline samples of the Electron Doped series La0.7Ce0.3MnO3 through pulsed laser deposition (PLD). C. Mitra, P Raychaudhuri, J. John, S. K. Dhar, A K. Nigam, R Pinto. J. Appl. Phys, 89, 524 (2001).
  • Magnetic and 4f-duadrupolar behaviour of Yb2Co3Al9 and the Kondo lattice Yb2Co3Ga9. S.K. Dhar, C. Mitra, P. Bonville, M. Rams, K. Królas, E. Godart, E. Alleno, N. Suzuki, K. Miyake, N. Watanabe, Y. Onuki, P. Manfrineti, A. Palenzona. Phys. Rev. B 64, 094423 (2001).
  • The nature of magnetism in CeScSi and CeScGe. Surjeet Singh, S K Dhar, C Mitra, P Paulose, P Manfrinetti and A Palenzona. J. Phys.: Condens. Matter 13, 3753 (2001).
  • A ‘p-n’diode with hole and electron-doped lanthanum nites, C. Mitra, P. Raychaudhuri, G. Köbernik, K. Dörr, K.H Müller, L. Shultz, R. Pinto. Applied Physics Letters 79, 2408 (2001).
  • Photoemission study of Yb2Co3X9 [X=Ga, Al]: Variation of the electronic structure from a mixed-valent to Kondo lattice system; T. Okane, S.-I. Fujimori, A. Ino, A. Fujimori, S. K. Dhar, C. Mitra, P. Manfrinetti, A. Palenzona, O. Sakai, Phys. Rev. B., 65, 125102.
  • Magnetotransport properties of a room temperature rectifying tunnel junction made of electron and hole doped nites, C. Mitra, G. Koebernik, K. Doerr, K.-H. Mueller, and L. Schultz P. Raychaudhuri, R. Pinto, E. Wieser, J. Appl. Phys, 91, 7715 (2002).
  • Observation of minority spin character of the new electron doped nite La0.7Ce0.3MnO3 from tunneling magnetoresistance; C. Mitra, P. Raychaudhuri, K. Doerr, K.-H. Mueller, L. Schultz, S. Wirth, Phys. Rev. Lett., 90, 17202 (2003).
  • Direct observation of electron doping in La0.7Ce0.3MnO3; C. Mitra, Z. Hu, P. Raychaudhuri, S. Wirth, S. I. Csizar, H.H. Hsieh, H.-J. Lin, C.T. Chen and L.H. Tjeng. Phys. Rev. B 67, 92404 (2003).
  • Phase Diagram and Hall effect of the Electron Doped nite La1-xCexMnO3. P. Raychaudhuri, C. Mitra, Peter Mann and S. Wirth, Jour Appl Phys., 93, 8328 (2003).
  • Photoemission and x-ray absorption spectroscopy study of electron-doped colossal magnetoresistive nite La0.7Ce0.3MnO3 films; S. W. Han1, J.-S. Kang, K. H. Kim, J. D. Lee, J. H. Kim, S. C. W, C. Mitra, P. Raychaudhuri, S. Wirth, K. J. Kim, B. S. Kim, J. I. Jeong, S. K. Kwon and B. I. Min, Phys. Rev. B 69, 104406 (2004).

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